inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF831FI description drain current C i d = 3.0a@ t c =25 drain source voltage- : v dss = 450v(min) static drain-source on-resistance : r ds(on) = 1.5 (max) fast switching speed simple drive requirements applications desinged for high efficiency switch mode power supply. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 20 v i d drain current-continuous@ t c =25 3 a p d power dissipation@t c =25 35 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.67 /w r th j-a thermal resistance,junction to ambient 80 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF831FI electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 450 v v gs( th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-stage resistance v gs = 10v; i d = 2.5a 1.5 i gss gate source leakage current v gs = 20v; v ds = 0 500 na i dss zero gate voltage drain current v ds = 450v; v gs = 0 250 ua v sd diode forward voltage i f = 3a; v gs = 0 1.6 v pdf pdffactory pro www.fineprint.cn
|
